Light-Sensitive Material Structure–Electrical Performance Relationship for Optical Memory Transistors Incorporating Photochromic Dihetarylethenes

Light-Sensitive Material Structure–Electrical Performance Relationship for Optical Memory Transistors Incorporating Photochromic Dihetarylethenes Full article

Journal

ACS Applied Materials & Interfaces
ISSN: 1944-8244 , E-ISSN: 1944-8252

Output data

Year: 2020, Volume: 12, Number: 29, Pages: 32987-32993 Pages count : 7 DOI: 10.1021/acsami.0c06049

Authors

Obrezkov Filipp A. ¹ , Dashitsyrenova Dolgor D. ² , Lvov Andrey G. ³ , Volyniuk Dmytro Y. ⁴ , Shirinian Valerii Z. ³ , Stadler Philipp ⁵ , Sariciftci Niyazi Serdar ⁵ , Aldoshin Sergey M. ² , Krayushkin Mikhail M. ³ , Troshin Pavel A ^6,7

Affiliations

1	Center for Energy Science and Technology , Skolkovo Institute of Science and Technology , Nobel Street 3 , Moscow 143026 , Russia.
2	Institute for Problems of Chemical Physics of Russian Academy of Science, Academician Semenov Avenue 1, Chernogolovka, Moscow Region 142432, Russia.
3	N.D. Zelinsky Institute of Organic Chemistry of Russian Academy of Science, Leninskiy Avenue 47, Moscow 119991, Russia
4	Kaunas University of Technology (KTU), K. Donelaičio g. 73, Kaunas 44249, Lithuania.
5	Linz Institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University Linz, Altenberger Strasse 69, Linz 4040, Austria.
6	Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia
7	Institute for Problems of Chemical Physics of Russian Academy of Science, Academician Semenov Avenue 1, Chernogolovka, Moscow Region 142432, Russia

Photoswitchable organic field-effect transistors (OFETs) with embedded photochromic materials are considered as a promising platform for development of organic optical memory devices. Unfortunately, the operational mechanism of these devices and guidelines for selection of light-sensitive materials are still poorly explored. In the present work, a series of photochromic dihetarylethenes with a cyclopentenone bridge moiety were investigated as a dielectric/semiconductor interlayer in the structure of photoswitchable OFETs. It was shown that the electrical performance and stability of the devices can be tuned by variation of the substituents in the structure of the photochromic material. In particular, it was found that dihetarylethenes with donor substituents demonstrated the best light-induced switching effects (wider memory windows and higher switching coefficients) in the devices. The operation mechanism of the light-triggered memory devices was proposed based on the differential in situ Fourier transform infrared (FTIR) spectroscopy data and regression analysis of the threshold voltage–programming time experimental dependencies. The established relationships will facilitate further rational design of new photochromic materials, thus paving a way to fast and durable organic optical memories and memory transistors (memristors).

Obrezkov F.A. , Dashitsyrenova D.D. , Lvov A.G. , Volyniuk D.Y. , Shirinian V.Z. , Stadler P. , Sariciftci N.S. , Aldoshin S.M. , Krayushkin M.M. , Troshin P.A.
Light-Sensitive Material Structure–Electrical Performance Relationship for Optical Memory Transistors Incorporating Photochromic Dihetarylethenes
ACS Applied Materials & Interfaces. 2020. V.12. N29. P.32987-32993. DOI: 10.1021/acsami.0c06049 WOS Scopus OpenAlex

Web of science:	WOS:000555417200078
Scopus:	2-s2.0-85088488115
OpenAlex:	W3037349120

DB	Citing
OpenAlex	14
Scopus	14
Web of science	14