OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers

OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers Full article

Journal

Advanced Electronic Materials
ISSN: 2199-160X

Output data

Year: 2016, Volume: 2, Number: 3, Article number : 1500219, Pages count : DOI: 10.1002/aelm.201500219

Authors

Frolova Lyubov A. ¹ , Rezvanova Alisa A. ¹ , Shirinian Valerii Z. ² , Lvov Andrey G. ² , Kulikov Alexander V. ¹ , Krayushkin Mikhail M. ² , Troshin Pavel A. ¹

Affiliations

1	Institute for Problems of Chemical Physics of Russian Academy of Sciences Semenov Prospect 1 Chernogolovka Moscow region 142432 Russian Federation
2	N. D. Zelinskiy Institute of Organic Chemistry Russian Academy of Sciences Moscow 119991 Russian Federation

Frolova L.A. , Rezvanova A.A. , Shirinian V.Z. , Lvov A.G. , Kulikov A.V. , Krayushkin M.M. , Troshin P.A.
OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers
Advanced Electronic Materials. 2016. V.2. N3. 1500219 . DOI: 10.1002/aelm.201500219 WOS Scopus OpenAlex

Web of science:	WOS:000372922800020
Scopus:	2-s2.0-85098444701
OpenAlex:	W2206835313

DB	Citing
OpenAlex	29
Scopus	31
Web of science	30